Fabrication of Ultra-Thin, Highly Uniform Thin Film SOI MOSFET's with Low Series Resistance Using Pattern-Constrained Epitaxy

        We report a novel fabrication process for self-aligned, ultra-thin, highly uniform thin film SOI MOSFET's with low series resistance. Self-aligned, ultra-thin SOI n-MOSFET's with 8 nm - 50 nm undoped channel were fabricated. For n-MOSFET's with a 0.2 um effective channel length, a saturation transconductance of 242 mS/mm, and a low series resistance (Rs/d=333 omega - um) were obtained.

By: Hon-Sum Philip Wong, Kevin K. Chan, Young Lee, Peter Roper and Yuan Taur

Published in: RC20529 in 1996

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