Fabrication of Ultra-Thin, Highly Uniform Thin Film SOI MOSFET's with Low Series Resistance Using Pattern-Constrained Epitaxy

We report a novel fabrication process for self-aligned, ultra-thin, highly uniform thin film SOI MOSFET's with low series resistance. Self-aligned, ultra-thin SOI n-MOSFET's with 8 nm - 50 nm undoped channel were fabricated. For n-MOSFET's with a 0.2 um effective channel length, a saturation transconductance of 242 mS/mm, and a low series resistance (Rs/d=333 omega - um) were obtained.