The performance of strained Si nFETs is studied as a function of channel length and Ge mole fraction using fullband Monte-Carlo simulations. The performance enhancement of strained Si is found to exhibit only modest channel length dependence upon scaling to the 20-nm regime. Although higher Ge mole fraction x leads to an increasing enhancement which is sustained upon channel length scaling, it is argued that x=0.17 represents a good practical design point.
By: Arvind Kumar; Massimo V. Fischetti; Steven E. Laux
Published in: RC23643 in 2005
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