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We report a novel silicon lateral trench photodetector that decouples the carrier transit
distance from the light absorption depth, enabling both high speed and high responsivity. The
photodetector, fabricated with fully VLSI compatible processes, exhibits a 3-dB bandwidth of 2.5
GHz at 3.0 V for a light source of 670 nm. An external quantum efficiency of 68% is achieved at
845nm wavelength. A photoreceiver with a wire-bonded lateral trench detector and BiCMOS trans-impedance amplifier demonstrates excellent operation at 2.5 Gbls data rate and 845 nm wavelength with only a 3.3 V bias.
By: Min Yang, Kern Rim, Dennis L. Rogers, Jeremy D. Schaub, Jeff Welser, Daniel M. Kuchta, Diane Boyd
Published in: IEEE Electron Device Letters, volume 23, (no 7), pages 395-7 in 2002
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