Measurement of Carrier Lifetime and Absorption Recovery Time in Reverse-Biased GaAs/AlGaAs Single Quantum Well Laser Structures with Optical Pulse Mixing

Copyright © (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

        We describe an optical pulse mixing experiment with a two-segment GaAs/AlGaAs single quantum well, graded-index separate confinement heterostructure laser to determine the effective lifetime of photogenerated carriers in a short reverse-biased segment with subpicosecond resolution. This lifetime is of importance if such
        a segment is used as a fast photodetector or as a saturable absorber in a monolithic mode-locked laser structure. We found that the lifetime depends not only on the applied bias but also on the excitation pulse energy. Lifetimes shorter than 5 ps have been observed. The strong dependence on excitation pulse energy is attributed to screening effects of the escaped carriers. A simple model based on an exact solution of the one-dimensional Schroedinger equation for a particle in a quantum well in an electric field together with an electrical equivalent circuit verifies this assumption.

By: L. R. Brovelli (Swiss Fed. Inst. of Tech.), J. Hugi (Swiss Fed. Inst. of Tech.), H. Jacker and H. Melchior (Swiss Fed. Inst. of Tech.)

Published in: Journal of Applied Physics, volume 76, (no 12), pages 7713-9 in 1994

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