Biaxial strain of Si, realized through epitaxial growth of a pseudomorphic Si layer on relaxed SiGe, is widely considered a promising candidate for achieving performance enhancement. Although enhanced mobility has been clearly observed in long-channel field-effect transistors (FETs) [1], with some enhancement reduction measured in 40-nm gate length FETs [2], uncertainty remains about the sustenance of performance enhancements for future technology nodes. Cai et al [3] have experimentally shown only moderate channel length dependence in strained -Si nFETs on SiGe-on-insulator scaled to sub-50-nm channel lengths, provided self-heating is correctly accounted for. The aim of this work is to provide a theoretical basis for understanding the scaling of strained-Si nFETs to the 20-nm regime by studying the dependence of performance on both channel length and Ge mole fraction through full-band Monte-Carlo simulations.
By: Arvind Kumar; Massimo V. Fischetti; Steven E. Laux
Published in: RC23546 in 2005
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