Copyright 2002 Society of Photo-Optical Instrumentation Engineers. This paper was (will be) published in and is made available as an electronic reprint [preprint] with permission of SPIE. Single print or electronic copies for personal use only are allowed. Systematic or multiple reproduction, distribution to multiple locations through an electronic listserver or other electronic means, duplication of any material in this paper for a fee or for commericial purposes, or modification of the content of the pater are all prohibited. By choosing to view or print this document, you agree to all the provisions of the copyright law protecting it.
KRS-XE, a high performance chemically amplified photoresist designed specifically for e-beam mask making applications, has been enhanced to achieve reduced "footing" on chrome oxide surfaces while still maintaining the original lithographic characteristics that make KRS-XE a promising mask making candidate. These attributes include high resolution, superior bake latitudes, high vacuum stability, coated shelf life of greater then 2 months, and, most notably, the absence of a post exposure bake. In conjunction with the footing reduction the requisite sensitivity requirement of <10uC/cm2 with 50 keV exposure tools has been achieved while retaining the robust process latitude previously reported for this resist. Through a careful study of the photoresist formulation components a route to ultra-high sensitivity of <2.5uC/cm2 at 50 keV has been elucidated which will further enhance throughput, decrease heating effects, and potentially be a suitable resist for e-beam projection lithography (EPL.)
By: Karen Petrillo, David Medeiros, Jim Bucchignano, Marie Angelopoulos, Dario Goldfard, Wu-Song Huang, Wayne Moreau, Robert Lang, Chester Huang, Christina Deverich, Tom Cardinali
Published in: SPIE Proceedings, volume 4889, (no 1), pages 607-18 in 2002
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