We describe the two-dimensional simulation of a bent resonant tunneling diode structure which displays vortices in its total current density pattern over a range of applied bias. In contrast, a double gate n-MOSFET is shown where such circulation exists in subband individual states but does not survive in the total current density solution. Both devices are simulated assuming ballistic quantum transport in Si at 300K.
By: Steven E. Laux, Arvind Kumar, Massimo V. Fischetti
Published in: RC22798 in 2003
LIMITED DISTRIBUTION NOTICE:
This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.
Questions about this service can be mailed to reports@us.ibm.com .