CMOS-Embedded Lasers for Advanced Silicon Photonic Devices

Realizing CMOS-compatible integrated lasers on silicon is a crucial step towards cost-efficient, high-functional optoelectronic integrated circuits (OEICs). Here, we report on a concept to embed active optical devices based on a bonded III-V epitaxial layer stack between the FEOL and BEOL of a CMOS silicon photonics chip. Ultrashallow laser devices are realized with this concept and optically-pumped lasing, coupled to silicon is demonstrated for the first time with such a concept.

By: M. Seifried, H. Hahn, G. Villares, F. Horst, D. Caimi, C. Caër, Y. Baumgartner, M. Sousa, R. Dangel, L. Czornomaz, B. J. Offrein

Published in: 2017 19th International Conference on Transparent Optical Networks (ICTON) , IEEE, p.10.1109/ICTON.2017.8024828 in 2017


This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.


Questions about this service can be mailed to .