Realizing CMOS-compatible integrated lasers on silicon is a crucial step towards cost-efficient, high-functional optoelectronic integrated circuits (OEICs). Here, we report on a concept to embed active optical devices based on a bonded III-V epitaxial layer stack between the FEOL and BEOL of a CMOS silicon photonics chip. Ultrashallow laser devices are realized with this concept and optically-pumped lasing, coupled to silicon is demonstrated for the first time with such a concept.
By: M. Seifried, H. Hahn, G. Villares, F. Horst, D. Caimi, C. Caër, Y. Baumgartner, M. Sousa, R. Dangel, L. Czornomaz, B. J. Offrein
Published in: 2017 19th International Conference on Transparent Optical Networks (ICTON) , IEEE, p.10.1109/ICTON.2017.8024828 in 2017
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