In this work we provide a compelling experimental and theoretical explanation for the low GIDL currents that occur due to band to band (b2b) tunneling in MOSFETs with <100> (45º rotated) channel direction compared to <110> oriented devices. In measurements on bulk Si wafers, we clearly show a factor of ~3x decrease in tunneling current for (001) wafers compared to (011) or (111) orientations supporting the GIDL observations. Rigorous calculations of complex band structure for the three directions reveal that the light hole band dominates the tunneling action integral, supporting our measurements and accounting for the GIDL data.
By: P. M. Solomon; S. E. Laux; L. Shi; J. Cai; W. Haensch
Published in: RC24724 in 2009
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