Influence of Trapped and Interfacial Charges in Organic Multilayer Light-emitting Devices

Copyright © (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

The influence of trapped and interfacial charges on the device characteristics of organic multilayer light-emitting devices is investigated. We have studied devices consisting of 20-nm copper phthalocyanine as buffer and hole-injection layer, 50-nm N,N'-di(naphthalene-1-yl)-N,N'-diphenyl- benzidine (NPB) as hole-transport layer, and 65-nm tris(8-hydroxyquinolinato)aluminum (Alq3) as electron transport and emitting layer sandwiched between a high-work-function metal and a semi-transparent Ca electrode. Current-voltage measurements show that the device characteristics in negative bias direction and at low positive bias are influenced by charges trapped within the organic layers. This is manifested by a strong dependence of the current on the direction and speed of the voltage sweep in this range. Low-frequency capacitance-voltage and static charge measurements reveal a voltage-independent capacitance in negative bias direction and a significant increase between 0 and 2 V, indicating the presence of negative interfacial charges at the NPB/Alq3 interface. Transient experiments show that the delay time of electroluminescence under forward bias conditions is controlled by the buildup of internal space charges rather than by charge-carrier transport through the organic layers.
Keyword: Bruetting

By: W. Brütting, H. Riel, T. Beierlein, and W. Riess

Published in: Journal of Applied Physics, volume 89, (no 3), pages 1704-12 in 2001

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