Low-energy proton-induced single event upsets in 65 nm Silicon-on-Insulator Latches and Memory Cells

Experimental data are presented showing that low energy (< 2 MeV) proton irradiation can upset exploratory 65nm Silicon-On-Insulator (SOI) circuits. Alpha particle SER data, modeling and simulation results provide a plausible mechanism.

By: Kenneth P. Rodbell; Michael S. Gordon; David F. Heidel; Henry H. K. Tang; Cristina Plettner; Phil Oldiges

Published in: RC24175 in 2007

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rc24175.pdf

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