In small silicon devices, conduction electrons in the channel
are subject to long-range Coulomb interactions with electrons in the
heavily-doped drain, source, and gate regions. We show that for devices
with channel lengths shorter than about 40~nm and oxides thinner than
2.5 nm these interactions cause a reduction of the electron velocity. We
present results obtained using both semiclassical two-dimensional self-
consistent Monte Carlo-Poisson simulations and a quantum-mechanical
model based on electron scattering from gate-oxide interface plasmons.
By: M. V. Fischetti and S. E. Laux
Published in: RC21634 in 2000
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