Transplanted Si Films on Arbitrary Substrates Using GaN Underlayers

We demonstrate that Si Layers overgrown on GaN/Sapphire substrate structures may be successfully transferred onto host substrates by using the technique of laser induced metallization of GaN at the GaN/sapphire interface, via the reaction GaN=Ga+1/2N₂. This allows the grafting of large areas of Si onto substrates such as glass or plastic for microelectronic applications. We examine the debonding mechanism and propose that it occurs due to pressures of the order of a few thousand atmospheres generated with the release of nitrogen from the GaN metallization reaction.