Influence of Charge Carrier Injection On the Device Performance of Blue Organic Light Emitting Diodes

Copyright 1998 Society of Photo-Optical Instrumentation Engineers. This paper was (will be) published in SPIE Proceedings and is made available as an electronic reprint [preprint] with permission of SPIE. Single print or electronic copies for personal use only are allowed. Systematic or multiple reproduction, distribution to multiple locations through an electronic listserver or other electronic means, duplication of any material in this paper for a fee or for commericial purposes, or modification of the content of the pater are all prohibited. By choosing to view or print this document, you agree to all the provisions of the copyright law protecting it.

Multilayer organic light-emitting diodes with a well-defined emission region are ideal systems to investigate the underlying mechanisms of device operation. In this paper we give a brief overview of our studies on the injection and recombination processes in blue organic light-emitting diodes. Our diodes consist of copper phthalocyanine as the hole-injection/buffer layer, the aromatic diamine N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine as the hole-transport layer, a distyrylarylene derivative as the emitting layer, tris(8-hydroxy-quinoline)aluminum as the electron-injection/transport layer sandwiched between indium tin oxide (ITO) as the transparent hole injector, and low work-function metals as the electron-injecting electrode. To reveal the limiting mechanisms in device operation we investigated the influence of different anode (ITO, optimized ITO) and cathode materials (Mg:Ag, Ca, LiF/Mg:Ag) as well as different layer thicknesses on the device characteristics. These investigations revealed that the device characteristics in the low and medium voltage range are determined by the injection properties of the electrodes, whereas at higher voltages (i.e. at higher current densities) a transition from an electrode-limited injection to a bulk-limited conduction process is detectable.

By: Heike Riel, Horst Vestweber, Walter Riess

Published in: SPIE Proceedings, volume 3281, (no ), pages in 1998

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