An overview of our recent work on ultrathin (<100 Å) films of metal oxides deposited on silicon for advanced gate dielectrics applications will be presented. Data on ultrathin Al2O3, ZrO2, HfO2, and Y2O3 will be shown to illustrate the complex processing, integration and device-related issues for high dielectric constant (“high-K”) materials. Both physical and electrical properties, as well as the effects of pre- and post-deposition treatments will be discussed.
By: E. P. Gusev, E. Cartier, D. A. Buchanan, M. Copel, M Gribelyuk, H.Okorn-Schmidt, C. D'Emic
Published in: Microelectronic Engineering, volume 59, (no 1-4), pages 341-9 in 2001
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