Two-dimensional self-consistent Poisson/Monte Carlo simulations of semiclassical electron transport in sub-100 nm Si devices show that long-range Coulomb interactions dominate the electron dynamics: The fluctuations of the potential in the heavily-doped source and drain contacts penetrate into the channel up to a distance of the order of the Debye length in the channel. In small devices this can be a significant fraction of the channel itself, so that the plasma fluctuations give raise to strongly nonthermal high-energy tails of the electron distribution in the channel itself. Simulations of the hot-electron degradation of the gate insulator emphasize the importance of these Coulomb effects.
By: M. V. Fischetti, S. E. Laux, D. J. DiMaria
Published in: RC21498 in 1999
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