This paper discusses material/device and fabrication problems related to the high-power performance of fundamental-mode GaAs/AlGaAs and InGaAs/AlGaAs laser diodes. Various views on the stability of these devices and their degradation are presented. Bulk-, mirror- and ohmic-contact-related issues, including the physics/chemistry of defect formation, are discussed.
By: A. Jakubowicz
Published in: Materials Science and Engineering B, volume 44, (no ), pages 359-63 in 1997
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