3D Monolithic (3DM) integration can provide both density scaling benefits and the possibility to stack independently optimized layers at transistor level. However, top layer thermal budget poses a considerable challenge in such a technology. Due to its inherently low process temperature, InGaAs is well-suited to be used as the top layer channel material. Therefore, InGaAs has the poten-tial to enable both low voltage-high performance ad-vanced CMOS, as well as high-frequency device for RF/mixed-signal applications. In this regard, we show here our recent progress in InGaAs-on-SiGe 3D Mono-lithic technology, demonstrating state-of-the art device in-tegration on both levels, DC and RF characterization top layer InGaAs nFETs and integrated inverters with sub-50 nm Lg down to VDD = 0.25 V.
By: V. Deshpande, V. Djara, T. Morf, P. Hashemi, E. O’Connor, K. Balakrishnan, D. Caimi, M. Sousa, J. Fompeyrine and L. Czornomaz
Published in: Int'l Conf. on Solid State Devices and Materials (SSDM), vol.Book of Extended Abstracts in 2016
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