Surface and Subsurface Imaging of Indium in InGaAs by Scanning Tunneling Microscopy

Investigating the ternary In$_{x}$Ga$_{1-x}$As alloy ($x \sim 12\%$) by cross-sectional scanning tunneling microscopy, we find that on the UHV-cleaved (110) surface the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty- and filled-state images, respectively. This is found to be mostly a geometric effect due to the larger size of the In. We apply this method to study the incorporation of In during the growth of In$_{0.12}$Ga$_{0.88}$As quantum wires on nonplanar substrates. Strong In segregation in the growth direction is seen in the structure, and we compare the incorporation profiles across the quantum wire and a planar quantum well. No In clustering beyond the statistical expectation is observed.

By: M. Pfister, M. B. Johnson, S. F. Alvarado, H. W. M. Salemink, U. Marti (EPFL, Switz.), D. Martin (EPFL, Switz.), F. Morier-Genoud (EPFL, Switz.) and F. K. Reinhart (EPFL, Switz.)

Published in: Applied Surface Science, volume 4, (no ), pages 516-21 in 1996

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