Copyright © (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
The resistivity of thin Cu films depends on film thickness as the dimensions approach the electron mean free path for Cu of 39 nm. The key size-dependant contributions are from electron-surface scattering, grain boundary scattering, and surface roughness-induced scattering. Measurements with pseudo-epitaxial Cu films deposited on Si have been undertaken to reduce effects of grain boundaries and surface roughness, which suggest an electron-scattering parameter of p = 0.12. Overlayers of metal films on the Cu generally increase the resistivity for Ta and Pt overlayers, and may reduce the resistivity for Au and Al. The resistivity increase may also be reversed if the overlayer oxidizes.
By: S. M. Rossnagel, T. S. Kuan
Published in: Journal of Vacuum Science and Technology B, volume 22, (no 1), pages 240-7 in 2004
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