Monolithic Integration of InAlAs/InGaAs Quantum-Well on InP-OI Micro-substrates on Si for Infrared Light Sources

We demonstrate for the first time that InAlAs/InGaAs QW can be selectively grown on micron-sized InP-OI substrates, obtained by selective epitaxy in empty oxide cavities on Si. The concept, material and optical characterizations are presented, paving the way towards integrated light sources for infrared applications.

By: Y. Baumgartner, B. Mayer, M. Sousa, D. Caimi, K. Moselund, L. Czornomaz

Published in: Proc.2017 IEEE 14th International Conference on Group IV Photonics (GFP, IEEE, p.173-174 in 2017


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