Comparison of Magnetocurrent and Transfer Ratio in Magnetic Tunnel Transistors with Spin-Valve Bases Containing Cu and Au Spacer Layers

Copyright © (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

The magnetocurrent of magnetic tunnel transistors with spin-valve base structures is found to be nearly insensitive to whether the spacer layer material in the spin valve is Cu or Au. By contrast the in-plane magnetoresistance of the same spin valves differs by almost a factor of two. Furthermore, the transfer ratio of the transistor structure is an order of magnitude lower for Au compared to Cu spacer layers. We attribute these different behaviors to the significant role of spin-dependent interface scattering for electrons near the Fermi energy but to much weaker such scattering for hot electrons in the energy range considered (~1-2eV).

By: Sebastiaan van Dijken, Xin Jiang, Stuart S. P. Parkin

Published in: Applied Physics Letters, volume 82, (no 5), pages 775-7 in 2003


This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.


Questions about this service can be mailed to .