Local thickness determination of thin insulator films via localized states

Copyright © (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

We propose measuring the lifetime of localized states below the conduction band to determine the local thickness of thin insulating films using scanning tunneling microscopy (STM). The lifetime, which is a characteristic fingerprint of the film thickness, is inversely proportional to the saturation value of the tunnel current through the localized state at close tip–sample separation and is readily measured using scanning tunneling spectroscopy. We demonstrate the method for 5–11 monolayer thick NaCl films grown on Cu(111).

By: W. Steurer, L. Gross, and G. Meyer

Published in: Applied Physics Letters, volume 104, (no ), pages 231606 in 2014

LIMITED DISTRIBUTION NOTICE:

This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.

rz3867.pdf

Questions about this service can be mailed to reports@us.ibm.com .