In this paper we report on our work on the monolithic integration of various III-V compounds on Si using template-assisted selective epitaxy (TASE) and its application for electronic devices. Nanowires, crossbar nanostructures, and micron-sized sheets are epitaxially grown on Si via metal-organic chemical vapor deposition and form the basis for III-V MOSFETs and Tunnel FETs. Epitaxy conditions specific to TASE are discussed and material quality assessed. Here, we focus on InAs and GaSb as a potential all-III-V alternative to complementary group IV technology. Scaled n-FETs as well as both n- and p-channel TFETs are fabricated on Si and illustrate the potential of TASE.
By: H. Schmid, D. Cutaia, J. Gooth, S. Wirths, N. Bologna, K. E. Moselund and H. Riel
Published in: 2016 IEEE International Electron Devices Meeting (IEDM 2016) , IEEE, p. 10.1109/IEDM.2016.7838340 in 2016
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