Copyright © (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
Ultralow dielectric constant pSiCOH films have been prepared using tetramethylcyclotetrasiloxane (TMCTS) as the skeleton precursor and two different porogen precursors. The porogen has been removed from the deposited films by thermal anneals at 400 oC, obtaining films with dielectric constants down to 1.95. The films have been investigated by Fourier transform infrared spectroscopy (FTIR) and n&k optical measurements of the refractive index (n) and the electrical characteristic have been measured on metal-insulator-semiconductor (MIS) structures. It was found that the properties of the annealed films depend on the deposition temperature and on the used porogen, different concentrations of porogens in the plasma feed being required to obtain the same final dielectric constant. The efficiency of porogen incorporation in the films prepared from TMCTS was very low and was dependent on the selected porogen precursor.
By: A. Grill; V. Patel
Published in: Journal of Applied Physics, volume 104, (no 2), pages Art No. 024113 in 2008
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