We summarize our recent work on atomic layer deposition (ALD) of metal oxides for advanced gate dielectrics applications. We present data on ultrathin (<10 nm) ZrO2, HfO2, Y2O3 and Al2O3 deposited on silicon. Both physical and electrical properties, as well as the effects of pre- and post-deposition treatments will be discussed.
By: E.P. Gusev, E. Cartier, M. Copel, M. Gribelyuk * , D.A. Buchanan, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski,M. Tuominen, M. Jussila, S. Haukka
Published in: RC22106 in 2001
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