Strained Si-on-Insulator Fabricated from Elastically-Relaxed Si/SiGe Structures

Copyright © (2004) by MRS. Permission to make digital or hard copies of part or all of this work for personal or classroom use is granted without fee provided that copies are not made or distrubuted for profit. To copy otherwise, to republish, to post on servers, or to redistribute to lists, requires prior specific permission and/or a fee.

Blanket pseudomorphic Si0.8Ge0.2/Si layer structures grown by Rapid thermal Chemical Vapor Deposition (RTCVD) on SOI substrates were etched to form 5 mum x 5 mum , supported by a single pedestal at the center. Symmetric tri-layer slabs, 20nm Si/236nm Si0.8Ge0.2/20nm Si supported by a SiO2 pedestal are flat and x-ray diffraction measurements of the strain and the thickness of the layers confirmed that the strain is shared between the Si and SiGe layers according to the ratio of the thickness of the SiGe and Si layers. These tri-layer structures were then firmly attached to the substrate using a filling material. A thermal oxide layer was grown on the upper and lower surface of the free-standing structures and then polycrystalline Si was deposited to fill the space between the free-standing structure and the Si substrate, thus attaching the bottom strained Si layer to the substrate. The polycrystalline Si was subsequently removed by reactive ion etching except from under the Si/SiGe/Si slab. The top SiO2 and Si layers as well as the SiGe layer were then removed selectively by wet etching. Raman spectroscopy measurements show that the strain in the attached strained Si-on-insulator layer is epsilon = 0.0067.

By: P. M. Mooney, G. M. Cohen, H. Chen, J. O. Chu, N. Klymko

Published in: MRS Symposia Proceedings Series, volume 809, (no ), pages 27-32 in 2004

LIMITED DISTRIBUTION NOTICE:

This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.

rc23165.pdf

Questions about this service can be mailed to reports@us.ibm.com .