Silicon Carbon Oxynitride as a Gate Dielectric Layer for a Thin Film Transistor

Silicon carbon oxynitride has been deposited with a PECVD method using SiCl(sub4)N(sub2) and CH(sub4), followed by a thermal annealing step. The film was characterized with Auger, FTIR, ESCA, SEM, and RBS. When it is included in the gate dielectric structure with a thin SiN(subx) interface layer, the TFT has excellent device characteristics. This film is potentially important for the inverted staggered TFT.