Light Emission During Direct and Fowler-Nordheim Tunneling in Ultra Thin MOS Tunnel Junctions

        Light emission from silicon/silicon dioxide/metal tunnel junctions in shown to cover a wide wavelength range from to infrared into the near-ultraviolet. The energy of the emitted light increases with increasing junction bias. This behavior appears to be consistent with calculations for light emission from direct conduction to conduction band transition of the hot electrons after tunneling into the silicon.

By: E. Cartier, J. C. Tsang, M. V. Fischetti and D. A. Buchanan

Published in: RC20720 in 1997

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