We report on the design, fabrication and measurements of a new THz sensor concept based on an antenna-coupled MOSFET bolometer for room-temperature passive THz imaging for security and medical-diagnostic applications. The device is fabricated in a 180-nm CMOS SOI technology followed by a post-CMOS MEMS process. In this sensor, the antenna absorbing the THz electromagnetic field is directly coupled to the bolometer for maximum energy collection, whereas its design aims at minimizing its thermal mass as is necessary for fast frame rates. DC measurements before and after the MEMS process as well as thermal time constant and THz antenna measurements are presented.
By: Thomas Morf, Bernhard Klein, Michel Despont, Ute Drechsler, Lukas Kull, Dan Corcos, Danny Elad, Noam Kaminski, Matthias Braendli, Christian Menolfi, Marcel Kossel, Pier Andrea Francese, Thomas Toifl, Dirk Plettemeier
Published in: Proc. 26th IEEE Int'l Conf. on Micro Electro Mechanical Systems "MEMS 2013," Taipei, Taiwan, IEEE, p.745-748 in 2013
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