Critical Temperature Enhancement by Means of Substrate-Induced Pressure

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In the field of high-temperature superconductivity there has been no increase in the critical temperature Tc of bulk compounds since 1993. However, an analysis of the uniaxial strain or pressure derivatives of Tc in the cuprate superconductors allows us to predict that under a compressive epitaxial strain, a large increase of Tc should be possible. We demonstrate the experimental feasibility of this approach for La(2-x)Sr(x)CuO(4+/-delta) (``214'') thin films deposited on (001)-oriented SrLaAlO(4) substrates for different Sr content (0.045 less than or equal to x less than or equal to 0.11). Under epitaxial strain, a large jump of the critical temperature Tc is observed, as well as a drastic change in the resistive behavior from insulating to metallic at low temperatures.

By: J. Perret, J. Fompeyrine, J. W. Seo, E. Mächler, O. Fischer, P. Martinoli and J.-P. Locquet

Published in: SPIE Proceedings, volume 3481, (no ), pages 310-16 in 1998

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