Investigations of UHV/CVD Deposition of SiGe Alloys on Silicon-on-Sapphire Substrates for Application to Device Fabrication Technology

The processing run for the frequency divider circuits completed in the previous quarter produced individual working p-MODFET devices. However several processing issues affecting device yield precluded the demonstration of a functioning frequency divider circuit. It is estimated that a device yield in excess of 95 % is required to get 10 % of the frequency divider circuits to work. Some of the key yield limiting steps in the process have been identified and are described below.

By: P.M. Mooney, D.V. Singh, S.J. Koester, J.O. Chu, J.A. Ott

Published in: RC22149 in 2001

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