Oxide Breakdown Model and Its Impact on SRAM Cell Functionality

It has been argued that oxide breakdown (BD) may limit CMOS scaling [1], but its impact on circuit functionality is not clear. Oxide reliability models assume that a single BD on a chip will cause circuit failure, but even hard breakdown (HBD) does not cause complete failure of some circuits [2]. The circuit chosen for this investigation includes an SRAM cell, the bit select and the sense amplifier circuit (Fig. 1.a).

By: R. Rodriguez, R. V. Joshi, J. H. Stathis, C. T. Chuang

Published in: RC22768 in 2003


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