Copyright 2002 Society of Photo-Optical Instrumentation Engineers. This paper was (will be) published in and is made available as an electronic reprint [preprint] with permission of SPIE. Single print or electronic copies for personal use only are allowed. Systematic or multiple reproduction, distribution to multiple locations through an electronic listserver or other electronic means, duplication of any material in this paper for a fee or for commericial purposes, or modification of the content of the pater are all prohibited. By choosing to view or print this document, you agree to all the provisions of the copyright law protecting it.
Several contact hole shrinking techniques have been discussed in the literature recently. Two notable techniques; Resolution Enhancement Lithography Assisted by Chemical Shrink (RELACS TM ) and Resist Flow Process (RFP) were investigated in conjunction with several commercially available high activation energy chemically amplified materials and one bilayer material. During the course of this study the unique set of advantages along with the inconveniences associated with each technique were explored. It was not only the lithographic attributes of each technique that were of interest, but also characteristics that would effect manufacturability. To that end, experiments were designed so that standard statistical techniques could be employed at the data analysis stage. The attributes of interest were the amount and control of shrinkage, nested and isolated feature bias, process window comparisons, and line edge roughness. It will be shown how several of theses attributes are directly related to manufacturing issues such as lot-to-lot repeatability and linewidth variations across the wafer.
By: Karen E. Petrillo, John P. Simons, Ronald DellaGuardia
Published in: SPIE Proceedings, volume 4690, (no ), pages 741-53 in 2002
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