Copyright © (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
X-ray diffraction is used to probe interdiffusion in asymmetrically strained, low concentration Si/SiGe superlattices. The results are shown to be in good agreement with a model developed from literature data for Ge diffusion in SiGe alloys obtained by an entirely different measurement strategy. Using this model it is shown that the transient fast diffusion frequently observed in Si/SiGe superlattices results primarily from the concentration dependence of the activation enthalpy for SiGe interdiffusion. Time dependent strain relaxation is shown to play a discernible, but secondary role in the transition from fast to slow diffusion. The linear proportionality constant relating the activation enthalpy of SiGe interdiffusion to biaxial strain is found to be ~19 eV/unit strain.
By: D.B. Aubertine, M.A. Mander, N. Ozguven, A.F. Marshall, P.C. McIntyre, Patricia M. Mooney, Jack O. Chu
Published in: Journal of Applied Physics, volume 92, (no 9), pages 5027-35 in 2002
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