We describe a formulation of quantum electron transport in small devices based on the Master equation. We sketch its derivation from the Liouville-von Neumann equation, especially alluding to the subtle issues related to irreversibility. We also present results regarding ballistic and dissipative transport in double gate Si FETs.
By: M. V. Fischetti, S. E. Laux, A. Kumar
Published in: IEEE International Electron Devices Meeting - Technical Digest. , IEEE. , p.467-70 in 2003
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