Electrically Active Defect States In Relaxed Si(1-x)Ge(x) Layers

By: P. M. Mooney, L. Tilly, C. P. D'Emic, J. O. Chu, F. Cardone, F. K. LeGoues, B. S. Meyerson

Published in: RC20552 in 1996

This Research Report is not available electronically. Please request a copy from the contact listed below. IBM employees should contact ITIRC for a copy.

Questions about this service can be mailed to reports@us.ibm.com .