Depending upon the oxygen content x, LaTiO(3+x) can be a semiconductor, a metal, or a ferroelectric at room temperature. Using a thin-film approach, it is in principle possible to adjust the oxygen content in the growth direction and thus tune the electronic properties within the same sample. We report here on a systematic study of the epitaxial growth of LaTiO(3.5) films on SrTiO(3) (110) substrates using molecular beam epitaxy. The epitaxial behavior and the growth mechanism of these films have been investigated by means of x-ray diffraction, transmission electron microscopy, and in situ reflection high-energy electron diffraction analysis.
By: J. Fompeyrine, J. W. Seo and J.-P. Locquet
Published in: European Ceramic Society. Journal, volume 19, (no 6-7), pages 1493-6 in 1999
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