In this paper, we will show that today’s SiGe transistor technologies can reasonable reach power levels of a few hundred milli-Watts, in a millimeter wave (MMW) regime above 31 GHz. This is done in two parts. First, published SiGe transistor output powers at MMW frequencies are presented. Second, a Figures of Merit (FoM) is discussed to
draw conclusions on performance values of power amplifiers (PAs). Based on this, we show that reasonable output power levels of 100’s of milli-Watts are possible today with further improvements expected in the future.
By: Ullrich Pfeiffer, Brian P. Gaucher, Modest M. Oprysko, Mehmet Soyuer
Published in: RC22797 in 2003
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