Strain Relaxation and Threading Dislocation Density in Helium-Implanted and Annealed Si1-xGex/Si (100) Heterostructures

Copyright © (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Strain relaxation and threading dislocation densities in Si1-xGex (0.15<x<0.30) produced by He implantation and annealing have been investigated using x-ray diffraction and transmission electron microscopy. The degree of strain relaxation is very sensitive to the SiGe layer thickness; only small differences in strain relaxation are obtained when the helium dose and energy are varied over a relatively wide range. In contrast, the threading dislocation density is strongly influenced by the implantation dose and depth. A composite parameter, the He dose in the SiGe layer (He(SiGe)), calculated from He profiles simulated using the program Stopping and Range of Ions in Matter (SRIM2000), correlates well with the threading dislocation density. We have found that to achieve a low threading dislocation density, <5x107 cm-2, He(SiGe) must be less than 1x1015 cm-2.

By: J. Cai, P. M. Mooney, S. H. Christiansen, H. Chen, J. O. Chu, J. A. Ott

Published in: Journal of Applied Physics, volume 95, (no 10), pages 5347-51 in 2004


This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.


Questions about this service can be mailed to .