Selective Area Metalorganic Molecular Beam Epitaxy of GaN and the Growth of Luminescent Micro-Columns on Si/SiO2

We demonstrate the selective area growth of gallium nitride on patterned Si(I I I)IGaN/SiO2 wafers by metalorganic molecular beam epitaxy using tri-ethyl gallium as a Ga source. We show that such selective area deposition may be used to grow isolated micro-columns of GaN with lateral dimensions of tens of nanometers on Si/SiO2 wafers. Via high resolution cathodoluminescence imaging we show that such micro-column structures are highly luminescent inspite of a large surface to volume ratio, indicating that non-radiative recombination at free surfaces is not a significant issue in this system.