The surface structure and the melting behavior of Ga(112) and Ga(100) surfaces have been studied by means of STM, LEED, ellipsometry, and laser heating. A 1x4 reconstruction of the missing-row type has been discovered at the Ga(112) surface. It stabilizes this surface in such a way, that the surface can be superheated by more than 0.1 K. The Ga(100) surface does not reconstruct. A layer of an anisotropicquasiliquid is found, which has a thickness of about 4 nm close to the melting temperature.
By: Ch. Gruetter, P. Reinert, U. Duerig and J.H. Bilgram
Published in: RZ3073 in 1998
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