Dual-Mode Parasitic Bipolar Effect in Dynamic CVSL XOR Circuit with Floating-Body Partially-Depleted SOI Devices

This paper presents a daily study on the impact of floating body in partially-depleted (PD) SOI MOSFET on the dynamic CVSL XOR circuit. It is shown that because of the cascading, differential input configuration, symmetry, and crisscross drain connections in the circuit topology, both normal-mode and inverse-mode parasitic bipolar effect (with parasitic bipolar current flowing from the source to the drain) will be present in every cycle when the clock changes from the precharge phase to the evoluation phase. The resulting impact on the circuit operation, stability and functionality are studied. The history dependency (hysteresis) and pattern dependency of the parasitic bipolar effect are discussed.

By: C. T. Chuang, P. F. Lu, J. Ji, L. F. Wagner (IBM Semiconductor Research and Development Center, Hopewell Junction), S. Chu (IBM Semiconductor Research and Development Center, Hopewell Junction) and C. J. Anderson

Published in: International Journal of Electronics, volume 86, (no 1), pages 55-66 in 1999

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