Silicon Micro/Nanomechanical Device Fabrication Based on Focused Ion Beam Surface Modification and KOH Etching

Selective Ga**(+) ion implantation and milling by focused ion beam exposure and subsequent wet chemical etching is used to fabricate micro/nanomechanical elements in Si. Freestanding elements with approximately 30 nm membrane thickness are made by controlled selective underetching between unexposed and exposed areas. Ultrahigh-frequency cantilever beams have been made with resonances in the tens of MHz range. Using a U-shaped beam cross section, mechanical stiffness could be increased 100-fold, which in turn increased the beam resonance frequency to several hundreds of MHz. The direct-write patterning/milling technique was used to fabricate various arbitrary shapes with vertical sidewalls such as submicrometer-sized containers, cups, and other nanomechanical devices.

By: J. Brugger, G. Beljakovic (Univ. of Neuchatel, Switz.), M. Despont, N. F. de Rooij (Univ. of Neuchatel, Switz.) and P. Vettiger

Published in: Journal of Microelectronic Engineering, volume 35, (no ), pages 401-4 in 1997

Please obtain a copy of this paper from your local library. IBM cannot distribute this paper externally.

Questions about this service can be mailed to .