The spins of localized electrons in silicon are strong candidates for quantum information processing because of their extremely long coherence times and the integrability of Si within the present microelectronics infrastructure. This paper reviews a strategy for fabricating single electron spin qubits in gated quantum dots in Si/SiGe heterostructures. We discuss the pros and cons of using silicon, present recent advances, and outline challenges.
By: Mark A. Eriksson, Mark Friesen, Susan N. Coppersmith, Robert Joynt, Levente J. Klein, Keith Slinker, Charles Tahan, P. M. Mooney, J. O. Chu, S. J. Koester
Published in: RC23192 in 2004
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