An overview of amorphous hydrogenated silicon nitride (a-SiNx:H ) prepared by plasma-enhanced chemical vapor deposition (PECVD) is discussed including applications, plasma deposition systems, characterization of films by FTIR, mechanism of film growth as determined by process chemistry, and dependence of film properties on process parameters.
By: Deborah Neumayer
Published in: RC25429 in 2013
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