Integrated Enhancement-and Depletion-Mode FETs in Modulation-Doped Si/SiGe Heterostructures

        In this Letter, we present results of enhancement and depletion mode transistors fabricated on the same layer structure Si/SiGe, without using gate recess. The current in the enhancement mode device is controlled by a pn-junction, while that of the depletion-mode device is controlled by a Schottky barrier. A peak transconductance of 335mS/mm and 440mS/mm has been achieved in 0.5 um gate length depletion and enhancement-mode transistors, respectively.

By: K. Ismail, J. O. Chu and M. Arafa (Univ. of IL)

Published in: RC20757 in 1997

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