In this Letter, we present results of enhancement and depletion mode transistors fabricated on the same layer structure Si/SiGe, without using gate recess. The current in the enhancement mode device is controlled by a pn-junction, while that of the depletion-mode device is controlled by a Schottky barrier. A peak transconductance of 335mS/mm and 440mS/mm has been achieved in 0.5 um gate length depletion and enhancement-mode transistors, respectively.
By: K. Ismail, J. O. Chu and M. Arafa (Univ. of IL)
Published in: RC20757 in 1997
This Research Report is not available electronically. Please request a copy from the contact listed below. IBM employees should contact ITIRC for a copy.
Questions about this service can be mailed to reports@us.ibm.com .