We report, for the first time, pMOSFETs fabricated on compressively-strained SiGe (110), combining the effects of both lower effective mass in (110) crystal orientation and biaxial straininduced hole mobility enhancement. This abstract describes an extensive material characteristics study of SiGe growth on Si (110), and the hole mobility in pMOSFETs fabricated on (110) SiGe/Si hetero-layer, which is ~180% and ~10% higher than the reference mobility in (100) and (110) Si pMOSFETs respectively.
By: K. K. Chan, M. Yang, K. Rim, N. Klymko, J. Ott, D. Canaperi, A. W. Topol, E. Sikorski, B. To, D. C. Boyd, W. Price, J. Newbury, K. W. Guarini, M. Ieong
Published in: RC24325 in 2007
LIMITED DISTRIBUTION NOTICE:
This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.
Questions about this service can be mailed to reports@us.ibm.com .