Copyright © (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
Conventional formulations of thermal stress evolution in interconnect structures usually ignore the interfaces between the various levels. In this article we present thermal and residual stress versus temperature data from simple copper-thin-film structures on
silicon. The results indicate that interconnection models which assume fully elastic behavior and ideal interfaces may yield inaccurate predictions of the thermo-mechanical response for feature sizes smaller than 10 micrometers.
By: Ismail C. Noyan, Conal E. Murray, Charles C. Goldsmith, S Chey
Published in: Applied Physics Letters, volume 85, (no 5), pages 724-6 in 2004
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