Copyright © (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
In the ever smaller silicon metal-oxide-semiconductor field-effect
transistors of the present technology, electrons in the conductive channel
are subject to increasingly stronger long-range Coulomb interactions with
high-density electron gases present in the source, drain, and gate regions.
We first discuss how two-dimensional, self-consistent full-band
Monte Carlo/Poisson simulations can be tailored to reproduce correctly the
semiclassical behavior of a high-density electron gas. We then employ these
simulations to show that for devices with channel lengths shorter than
about 40 nm and oxides thinner than about 2.5 nm, the long-range Coulomb
interactions cause a significant reduction of the electron velocity, and
so a degradation of the performance of the devices. In addition, the
strong `thermalization' of the hot-electron energy distribution induced
by Coulomb interactions has an effect on the expected reliability of the
transistors.
By: M. V. Fischetti, S. E. Laux
Published in: Journal of Applied Physics, volume 89, (no 2), pages 1205-31 in 2001
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